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TYPICAL PERFORMANCE CURVES
APT40GP60B2DF2
APT40GP60B2DF2
600V
POWER MOS 7 IGBT
(R)
T-MaxTM
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
G
C
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current
7
* 100 kHz operation @ 400V, 41A * 200 kHz operation @ 400V, 26A * SSOA rated
E
C G E
All Ratings: TC = 25C unless otherwise specified.
APT40GP60B2DF2 UNIT
600 20 30
@ TC = 25C Volts
100 62 160 160A @ 600V 543 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 500
2
6 2.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
I CES I GES
A nA
4-2004 050-7404 Rev C
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
3000 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT40GP60B2DF2
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 40A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC(Peak) = 400V VGE = 15V I C = 40A
4
MIN
TYP
MAX
UNIT pF V nC A
4610 395 25 7.5 135 30 40 160 20 29 64 45 385 644 352 450 20 29 89 69 385 972 615 950
mJ ns mJ ns
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
4 5
R G = 5 TJ = +25C
Turn-on Switching Energy (Diode) 5
6
Inductive Switching (125C) VCC(Peak) = 400V VGE = 15V I C = 40A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode)
6
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.23 .67 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7404
Rev C
4-2004
TYPICAL PERFORMANCE CURVES
80 70
IC, COLLECTOR CURRENT (A)
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
80 70
IC, COLLECTOR CURRENT (A)
APT40GP60B2DF2
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
TC=-55C
60 50 40 30 20 10 0 TC=125C
TC=-55C
60 50 40 30 20 10 TC=125C 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 40A TJ = 25C
TC=25C
TC=25C
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
0
FIGURE 1, Output Characteristics(VGE = 15V) 250
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 GATE CHARGE (nC) FIGURE 4, Gate Charge 120 140
IC, COLLECTOR CURRENT (A)
200
VCE=120V VCE=300V VCE=480V
150
100
TJ = -55C TJ = 25C TJ = 125C
50
0
0
1 23 456 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3 2.5 2 1.5 1 0.5 0 IC= 80A IC= 40A IC= 20A
3.5 3 2.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC= 80A
IC= 40A 2 IC= 20A 1.5 1 0.5 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 180 160 0 -50 -25
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
6
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
140 120 100 80
4-2004
60 40 20 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25
050-7404
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
Rev C
40
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
100
APT40GP60B2DF2
VGE =15V,TJ=125C VGE =10V,TJ=125C VGE =15V,TJ=25C
35 30 25 20 15 10 5 0
VGE= 10V
80
VGE= 15V
60
VGE =10V,TJ=25C
40
VCE = 400V TJ = 25C, TJ =125C RG = 5 L = 100 H
20
VCE = 400V RG = 5 L = 100 H
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 120 100
tr, RISE TIME (ns)
TJ = 25 or 125C,VGE = 10V
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100
RG =5, L = 100H, VCE = 400V TJ = 125C, VGE = 10V or 15V
0
80
tf, FALL TIME (ns)
80 60 40 20 0
TJ = 25 or 125C,VGE = 15V RG =5, L = 100H, VCE = 400V
60
40
TJ = 25C, VGE = 10V or 15V
20
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000
EON1, TURN ON ENERGY LOSS (J)
VCE = 400V VGE = +15V RG = 5
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2000
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 400V VGE = +15V RG = 5
0
TJ =125C, 15V
2500 2000
TJ =125C,10V
1500
TJ = 125C, VGE = 10V or 15V
1500 TJ = 25C, 10V 1000 500
TJ = 25C, 15V
1000
500
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 4000
SWITCHING ENERGY LOSSES (J)
VCE = 400V TJ = 125C VGE = +15V
0
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 3000
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V RG = 5
0
TJ = 25C, VGE = 10V or 15V
Eon2 80A
Eon2 80A
3500 3000 2500 2000 1500 1000 500
2500 2000 1500 1000 500 0
Eoff 80A Eon2 40A Eon2 20A Eoff20A 0
Eoff 80A Eon2 40A
4-2004
Eoff 40A
Rev C
Eoff 40A
Eon2 20A Eoff 20A
050-7404
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
10,000 5,000 1,000 500
IC, COLLECTOR CURRENT (A)
APT40GP60B2DF2
Cies 180 160 140 Coes 120 100 80 60 40 20 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area 0
C, CAPACITANCE ( F)
P
100 50 10 Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.25
, THERMAL IMPEDANCE (C/W)
0
0.20
0.9
0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
Z
JC
SINGLE PULSE 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
RC MODEL
260
0.0106
0.00663F
FMAX, OPERATING FREQUENCY (kHz)
Junction temp. ( "C)
100
Power (Watts)
0.0868
0.0106F
50
Fmax = min(f max1 , f max 2 ) f max1 =
TJ = 125C TC = 75C D = 50 % VCE = 400V RG = 5
0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
0.133 Case temperature
0.262F
f max 2 = Pdiss =
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
TJ - TC R JC
20
050-7404
Rev C
4-2004
APT40GP60B2DF2
APT30DF60
10%
TJ = 125 C
Gate Voltage
V CC
IC
V CE
td(on)
tr 90%
Collector Current
A D.U.T.
5% 10%
5%
Collector Voltage
Figure 21, Inductive Switching Test Circuit
Switching Energy
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
TJ = 125 C
VTEST *DRIVER SAME TYPE AS D.U.T.
td(off)
Collector Voltage
A V CE 100uH IC V CLAMP A B
90%
10% 0
tf
Switching Energy
Collector Current
DRIVER*
D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
050-7404
Rev C
4-2004
TYPICAL PERFORMANCE CURVES
APT40GP60B2DF2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 99C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 40A Forward Voltage IF = 80A IF = 40A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT40GP60B2DF2 UNIT Amps
30 49 320
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.4 3.0 1.8
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A, diF/dt = -200A/s VR = 400V, TC = 125C IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C
21 62 65 3 113 411 7 49 704 22 -
-
Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.70
, THERMAL IMPEDANCE (C/W)
0.60 0.50 0.40
0.9
0.7
0.5 0.30 0.20 0.10 0 0.3 SINGLE PULSE Note:
PDM t1 t2
JC
0.1 0.05 10-5 10-4
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.378 C/W Power (watts) 0.291 C/W Case temperature (C) 0.110 J/C 0.00232 J/C
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7404
Rev C
4-2004
100 90
trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A)
120 60A 100 80 60 40 20 0 30A
APT40GP60B2DF2
TJ = 125C VR = 400V
80 70 60 50 40 30 20 10 0 0 TJ = 125C TJ = 150C
15A
TJ = 25C
TJ = -55C 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change 25
IRRM, REVERSE RECOVERY CURRENT (A)
TJ = 125C VR = 400V
900
Qrr, REVERSE RECOVERY CHARGE (nC)
800 700 600 500 400 300 200 100 0 0
TJ = 125C VR = 400V
60A
60A 30A
20
15 30A 10 15A 5
15A
200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 1.4 1.2
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 60
Duty cycle = 0.5 TJ = 150C
0
Qrr t rr
IF(AV) (A)
50 40 30 20 10 0
1.0 t rr 0.8 0.6 0.4 0.2 0.0 I RRM Qrr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature 450 400
CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature
25
50
350 300 250 200 150 100 50 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 0 .3
050-7404
Rev C
4-2004
TYPICAL PERFORMANCE CURVES
Vr +18V 0V D.U.T. 30H diF /dt Adjust
APT6017LLL
APT40GP60B2DF2
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 33. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 34, Diode Reverse Recovery Waveform and Definitions
T-MAX (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
(R)
Collector (Cathode)
20.80 (.819) 21.46 (.845)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7404
Dimensions in Millimeters and (Inches)
Rev C
4-2004
1.01 (.040) 1.40 (.055)
Gate Collector (Cathode) Emitter (Anode)

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